 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary data BUZ 100S-4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated Type BUZ 100S-4 VDS 55 V ID 8A RDS(on) 0.02 Package P-DSO-28 Ordering Code C67078-S. . . . -A.. Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 8 Unit A ID IDpuls 32 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 8 A, VDD = 25 V, RGS = 25 L = 11.8 mH, Tj = 25 C Reverse diode dv/dt kV/s IS = 8 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Power dissipation ,one channel active VGS Ptot 20 2.4 V W TA = 25 C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 C Semiconductor Group 1 01/Oct/1997 Preliminary data BUZ 100S-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 3 0.1 10 0.016 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 130 A Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 55 V, VGS = 0 V, Tj = -40 C VDS = 55 V, VGS = 0 V, Tj = 25 C VDS = 55 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS 100 nA 0.02 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 8 A Semiconductor Group 2 01/Oct/1997 Preliminary data BUZ 100S-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 15 1900 615 310 - S pF 2375 770 390 ns 25 40 VDS 2 * ID * RDS(on)max, ID = 8 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 8 A RG = 4.6 Rise time tr 25 40 VDD = 30 V, VGS = 10 V, ID = 8 A RG = 4.6 Turn-off delay time td(off) 75 115 VDD = 30 V, VGS = 10 V, ID = 8 A RG = 4.6 Fall time tf 35 3.8 50 63 4.43 55 nC 5.7 75 95 V - VDD = 30 V, VGS = 10 V, ID = 8 A RG = 4.6 Gate charge at threshold Qg(th) Qg(7) - VDD = 40 V, ID 0.1 A, VGS =0 to 1 V Gate charge at 7.0 V VDD = 40 V, ID = 8 A, VGS =0 to 7 V Gate charge total Qg(total) - VDD = 40 V, ID = 8 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 8 A Semiconductor Group 3 01/Oct/1997 Preliminary data BUZ 100S-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current, pulsed A 0.95 70 0.2 8 32 V 1.6 ns 105 C 0.3 Values typ. max. Unit ISM VSD trr Qrr TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = 16 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 01/Oct/1997 Preliminary data BUZ 100S-4 Power dissipation Ptot = (T) Drain current ID = (TC) parameter: VGS 10 V 9 A 2.6 W 2.2 RthJC thJA Ptot 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 ID 7 6 5 4 3 2 1 0.2 0.0 0 20 40 60 80 100 120 140 C T 180 0 0 20 40 60 80 100 120 140 C 180 TC Semiconductor Group 5 01/Oct/1997 Preliminary data BUZ 100S-4 Typ. output characteristics ID = (VDS) parameter: tp = 80 s l Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.065 18 A k tot = 2W ji P h ge fd VGS [V] 4.0 ca b 4.5 c 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.055 a ID 14 12 10 8 RDS (on) 0.050 0.045 0.040 0.035 0.030 c b d e f g h i 0.025 0.020 0.015 0.010 VGS [V] = a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 b d e f h i j g 6 4 2 j k l a 0.005 V 5.0 0.000 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 4 6 8 10 12 A 16 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 120 A 100 ID 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 01/Oct/1997 Preliminary data BUZ 100S-4 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 8 A, VGS = 10 V 0.055 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 130 A 4.6 V 4.0 0.045 RDS (on) 0.040 98% VGS(th) 3.6 3.2 typ 0.035 2.8 0.030 98% 0.025 2.4 2.0 1.6 1.2 0.8 0.4 2% typ 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 C 180 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 3 A C pF IF 10 2 Ciss 10 3 Coss 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 10 0 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 01/Oct/1997 Preliminary data BUZ 100S-4 Avalanche energy EAS = (Tj) parameter: ID = 8 A, VDD = 25 V RGS = 25 , L = 11.8 mH 400 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 8 A 16 V EAS 320 280 240 200 160 120 VGS 12 10 8 0,2 VDS max 0,8 VDS max 6 4 80 40 0 20 2 0 0 40 60 80 100 120 140 C 180 10 20 30 40 50 60 70 nC 90 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 01/Oct/1997 |
Price & Availability of BUZ100S-4
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |